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FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: * * * * * * Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
* 100kHz Operation at 390V, 7A * 200kHZ Operation at 390V, 5A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC * Low Gate Charge . . . . . . . . . 30nC at VGE = 15V * Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical * UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ * Low Conduction Loss * Low Eon * Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469)
Package
TO-247
E C G
Symbol
C
TO-220AB
E C G
TO-263AB
G
G E E
Device Maximum Ratings TC= 25C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range
COLLECTOR (FLANGE)
Ratings 600 28 13 40 20 30 35A at 600V 100 125 1.0 -55 to 150 -55 to 150 Units V A A A V V A mJ W W/C C C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
(c)2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Package Marking and Ordering Information
Device Marking 20N6S2D 20N6S2D 20N6S2D 20N6S2D Device FGH20N6S2D FGP20N6S2D FGB20N6S2D FGB20N6S2DT Package TO-247 TO-220AB TO-263AB TO-263AB Tape Width N/A N/A N/A 24mm Quantity 30 50 50 800 units
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current IC = 250A, VGE = 0 VCE = 600V VGE = 20V TJ = 25C TJ = 125C 600 250 2.0 250 V A mA nA
On State Characteristics
VCE(SAT) VEC Collector to Emitter Saturation Voltage Diode Forward Voltage IC = 7.0A, VGE = 15V IEC = 7.0A TJ = 25C TJ = 125C 2.2 1.9 1.9 2.7 2.2 2.7 V V V
Dynamic Characteristics
QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V VGE = 15V VGE = 20V 3.5 30 38 4.3 6.5 36 45 5.0 8.0 nC nC V V
IC = 250A, VCE = 600V IC = 7.0A, VCE = 300V
Switching Characteristics
SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF trr Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 1) Turn-On Energy (Note 1) Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 1) Turn-On Energy (Note 1) Turn-Off Energy (Note 2) Diode Reverse Recovery Time IEC = 7A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s IGBT and Diode at TJ = 125C ICE = 7A, VCE = 390V, VGE = 15V, RG = 25 L = 0.5mH Test Circuit - Figure 26 TJ = 150C, RG = 25, VGE = 15V, L = 0.5mH VCE = 600V IGBT and Diode at TJ = 25C, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25 L = 0.5mH Test Circuit - Figure 26 35 7.7 4.5 87 50 25 85 58 7 4.5 120 85 20 125 135 26 20 75 145 105 140 180 31 24 A ns ns ns ns J J J ns ns ns ns J J J ns ns
Thermal Characteristics
RJC
NOTE: 1. Values
Thermal Resistance Junction-Case
IGBT Diode
-
-
1.0 2.2
C/W C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26.
2. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves
30 VGE = 15V ICE , DC COLLECTOR CURRENT (A) 25 ICE, COLLECTOR TO EMITTER CURRENT (A) 40 TJ = 150oC, RG = 25, VGE = 15V, L = 500H 35 30 25 20 15 10 5 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
15
10
5
0
Figure 1. DC Collector Current vs Case Temperature
700 TC = 75oC fMAX, OPERATING FREQUENCY (kHz) 400 VGE = 10V VGE = 15V
Figure 2. Minimum Switching Safe Operating Area
12 tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 390V, RG = 25, TJ = 125oC 10 tSC 8 ISC 6
210 ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.5
180
150
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.27oC/W, SEE NOTES TJ = 125oC, RG = 25 L = 500H, V CE = 390V ,
120
4
90
20 1 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 20
2 9 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V)
60
Figure 3. Operating Frequency vs Collector to Emitter Current
14 ICE, COLLECTOR TO EMITTER CURRENT (A) 12 10 8 6 TJ = 150oC 4 2 TJ = 125oC 0 0.50 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 2.75 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s
Figure 4. Short Circuit Withstand Time
14 12 10 8 6 TJ = 150oC 4 2 TJ = 125oC 0 0.50 0.75 1.0 1.25 1.5 1.75 2.0 2.25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250s
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves (Continued)
400 RG = 25, L = 500H, VCE = 390V EON2 , TURN-ON ENERGY LOSS ( J) EOFF TURN-OFF ENERGY LOSS (J) 350 300 TJ = 25oC, TJ = 125oC, VGE = 10V 250 200 150 100 50 TJ = 25oC, TJ = 125oC, VGE = 15V 0 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) 0 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) 300 250 200 TJ = 125oC, VGE = 10V, VGE = 15V 150 100 50 TJ = 25oC, VGE = 10V, VGE = 15V 350 RG = 25, L = 500H, VCE = 390V
Figure 7. Turn-On Energy Loss vs Collector to Emitter Current
13 RG = 25, L = 500H, VCE = 390V td(ON)I, TURN-ON DELAY TIME (ns) 12 11 10 TJ = 25oC, TJ = 125oC, VGE = 10V 9 TJ = 25oC, TJ = 125oC, VGE = 15V 8 7 6 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current
35 RG = 25, L = 500H, VCE = 390V 30 25 20 TJ = 25oC, TJ = 125oC, VGE = 10V 15 10 5 TJ = 25oC, TJ = 125oC, VGE =15V 0 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to Emitter Current
140 RG = 25, L = 500H, VCE = 390V td(OFF)I , TURN-OFF DELAY TIME (ns) VGE = 10V, VGE = 15V, TJ = 120 125oC
trI , RISE TIME (ns)
Figure 10. Turn-On Rise Time vs Collector to Emitter Current
120 RG = 25, L = 500H, VCE = 390V
100 tfI , FALL TIME (ns) TJ = 125oC, VGE = 10V or 15V
100
80
80
60 TJ = 25oC, VGE = 10V or 15V VGE = 10V, VGE = 15V, TJ = 25oC
60 0 2 4 6 8 10 12 14
40 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to Emitter Current
Figure 12. Fall Time vs Collector to Emitter Current
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves (Continued)
120 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s 100 16 IG(REF) = 1mA, RL = 42.6, TJ = 25oC 14 12 VCE = 600V 10 8 6 VCE = 400V 4 VCE = 200V 2 0 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC)
80 TJ = 25oC 60
40
20
TJ = 125oC TJ = -55oC
0
Figure 13. Transfer Characteristic
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 0.8 RG = 25, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 0.6 ICE = 14A 10
Figure 14. Gate Charge
TJ = 125oC, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
1 ICE = 14A
0.4 ICE = 7A 0.2 ICE = 3A
ICE = 7A
ICE = 3A 0.1 0.05 1 10 100 1000 RG, GATE RESISTANCE ()
0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case Temperature
1.2 FREQUENCY = 1MHz 1.0 C, CAPACITANCE (nF) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 16. Total Switching Loss vs Gate Resistance
3.6 3.4 3.2 ICE = 14A 3.0 2.8 2.6 2.4 2.2 2.0 ICE = 7A ICE = 3A DUTY CYCLE < 0.5% PULSE DURATION = 250s, TJ = 25oC
0.8 CIES
0.6
0.4 COES CRES 0 10 20 30 40 50 60 70 80 90 100
0.2
0.0
5
6
7
8
9
10
11
12
13
14
15
16
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter Voltage
Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves (Continued)
14 12 IEC , FORWARD CURRENT (A) 10 8 6 125oC 4 25oC 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VEC , FORWARD VOLTAGE (V) trr, REVERSE RECOVERY TIMES (ns) DUTY CYCLE < 0.5%, PULSE DURATION = 250s 250 dIEC/dt = 200A/s, VCE = 390V 200 125oC tb, trr 150
100 25oC tb, trr 50
125oC ta 25o ta 0 2 4 6 8 10 12 14
0 IEC , FORWARD CURRENT (A)
Figure 19. Diode Forward Current vs Forward Voltage Drop
160 140 120 100 80 60 40 125oC ta 20 0 200 25oC ta 300 400 500 600 700 800 900 1000 25oC tb 125oC tb IEC = 7A, VCE = 390V ta, tb, REVERSE RECOVERY TIMES (ns)
Figure 20. Recovery Times vs Forward Current
500 Qrr , REVERSE RECOVERY CHARGE (nC) VCE = 390V 450 400 125oC, IEC = 7A 350 300 250 200 150 100 200 300 400 500 600 700 800 900 1000 dIEC/dt, RATE OF CHANGE OF CURRENT (A/s) 25oC, IEC = 3.5A
125oC, IEC = 3.5A 25oC, IEC = 7A
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
Figure 21. Recovery Times vs Rate of Change of Current
6.0 S, REVERSE RECOVERY SOFTNESS FACTOR VCE = 390V, TJ = 125C 5.5 IEC = 7A 5.0
Figure 22. Stored Charge vs Rate of Change of Current
IRRM, MAX REVERSE RECOVERY CURRENT (A) 10 VCE = 390V, TJ = 125C 9 8 IEC = 7A 7 6 IEC = 3.5A 5 4 3 200 300 400 500 600 700 800 900 1000
4.5 IEC = 3.5A 4.0
3.5
3.0 200 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/s)
dIEC/dt, CURRENT RATE OF CHANGE (A/s)
Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves (Continued)
ZJC , NORMALIZED THERMAL RESPONSE
100 0.50 0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
t1
t1 , RECTANGULAR PULSE DURATION (s)
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH20N6S2D DIODE TA49469 90% VGE L = 500H VCE RG = 25 + FGH20N6S2D 90% ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
-
Figure 26. Inductive Switching Test Circuit
Figure 27. Switching Test Waveforms
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by P C = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turnon and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
(c)2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM
FACT FACT Quiet Series FASTa FASTr FRFET GlobalOptoisolator GTO HiSeC I2C
Across the board. Around the world. The Power Franchise
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I

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